Our Research Center
This page introduces our laboratory’s main experimental work, including material preparation, surface treatment, thin-film processes, and characterization.
Metal Interface Engineering
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Plasma-Power-Controlled Ar/N₂ Activation for Electroless Cu Deposition and Seed-Layer Adhesion on Heterogeneous Substrates.
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Our addresses the challenges of heterogeneous integration in advanced packaging by employing plasma-assisted surface modification to tune the interface energy of various substrates (e.g., SiO₂, SiC, Si).
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Enhance film density and adhesion strength while investigating the evolution mechanisms of Cu–Cu bonding interfaces on Heterogeneous Integration.
Semiconductor Packaging and Bonding Technology
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To mitigate package warpage and thermal fatigue, this research utilizes the non-hydrolytic sol–gel (NHSG) method to develop negative thermal expansion (NTE) materials, specifically Ti-doped ZrV₂O₇.
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By optimizing the integration of NTE fillers into epoxy composites.
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Our research enables precise thermal stress compensation within the package, providing low-warpage and high-durability structural solutions for next-generation high-power devices.
