top of page
image.png

Hello, I'm Yu-Jie Huang

Electroless plating

Awarded Honorable Mention at TwIChE.

Electroless copper plating is a solution-based copper deposition process driven by an autocatalytic redox reaction. Unlike electroplating, it does not require an external power supply. In the plating bath, copper ions are chemically reduced by a reducing agent, such as formaldehyde or glyoxylic acid, on catalytic sites located on the substrate surface. Once the initial copper nuclei are formed, the deposited copper can further catalyze the reaction, allowing continuous copper growth.

For non-conductive substrates such as glass, surface pretreatment and catalytic activation are necessary before plating. Pd/Sn activation or other catalytic seed layers are commonly used to provide active nucleation sites for copper deposition. Therefore, electroless copper plating is especially suitable for forming uniform copper coatings on insulating substrates, complex geometries, and high-aspect-ratio structures used in advanced semiconductor packaging.

image.png

Hello, I'm Yu-An Lo

Electroless plating

Electroless copper plating is a solution-based copper deposition process driven by an autocatalytic redox reaction. Unlike electroplating, it does not require an external power supply. In the plating bath, copper ions are chemically reduced by a reducing agent, such as formaldehyde or glyoxylic acid, on catalytic sites located on the substrate surface. Once the initial copper nuclei are formed, the deposited copper can further catalyze the reaction, allowing continuous copper growth.

For non-conductive substrates such as glass, surface pretreatment and catalytic activation are necessary before plating. Pd/Sn activation or other catalytic seed layers are commonly used to provide active nucleation sites for copper deposition. Therefore, electroless copper plating is especially suitable for forming uniform copper coatings on insulating substrates, complex geometries, and high-aspect-ratio structures used in advanced semiconductor packaging.

image.png

Hello, I'm Yu-Hsuan Chen

Negative thermal expansion material

This research focuses on zirconium vanadate (ZrV₂O₇)-based negative thermal expansion materials and their application as functional fillers in electronic packaging underfill. Due to the large coefficient of thermal expansion (CTE) mismatch among silicon chips, substrates, copper micro-bumps, and epoxy underfill, advanced packaging structures often suffer from thermal stress accumulation and warpage during thermal processing or device operation. By incorporating ZrV₂O₇ into the underfill system, this study aims to tailor the overall thermal expansion behavior of the composite material, reduce CTE mismatch, suppress package warpage, and improve the thermomechanical reliability of advanced electronic packaging.

image.png

Hello, I'm Wei-Chih Lai

Negative thermal expansion material

This research focuses on zirconium vanadate (ZrV₂O₇)-based negative thermal expansion materials and their application as functional fillers in electronic packaging underfill. Due to the large coefficient of thermal expansion (CTE) mismatch among silicon chips, substrates, copper micro-bumps, and epoxy underfill, advanced packaging structures often suffer from thermal stress accumulation and warpage during thermal processing or device operation. By incorporating ZrV₂O₇ into the underfill system, this study aims to tailor the overall thermal expansion behavior of the composite material, reduce CTE mismatch, suppress package warpage, and improve the thermomechanical reliability of advanced electronic packaging.

Join our mailing list for updates on publications and events

臺中市西屯區福恩里台灣大道四段1727號科技路化材系館

(04) 2359-0121 #33214

© 2035 by The Thomas Hill. Powered and secured by Wix

bottom of page