Publications
This page presents the journal publications contributed by members of our laboratory in recent years. The research topics cover advanced materials, surface modification, metallization processes, and electronic packaging. These publications highlight our continuous efforts and academic contributions in materials design, process development, and reliability analysis.
1. Wen-Yuan Chan, Chia-Hua Lin(林佳樺),Wen-Ching Shih,Yu-Ting Chow,Pei-Cheng Jiang,Cheng-Hsun-Tony Chang,Chi-Wen Liu (2026.03). Hydrogen plasma enables diamond-graphite coexistence: mechanism and optimized field emission. Vacuum, 248, 115227.
2. Yun-Fong Lee, Chih-Wen Chiu, Chin-Yen Chiu, Yu-Chen Huang, Mei-Hsin Lo, Liu-Hsin-Chen Yang, Ting-Yi Cheng, Zhong-Yen Yu, Chih-En Hsu, Kai-Chi Lin, Po-Yu Chen, Wei-Cheih Huang, Jui-Sheng Chang, Shao-An Pan, Yi-Cheng Su, Chin-Li Lin, Hang-Chen Hsieh, Chia-Hua Lin(林佳樺)*, Cheng-Yi Liu* (2025.08). Grain boundary motions of low temperature and low pressure copper to copper direct bonding by electroplating ultra-fine-grain (UFG) Cu. Scientific Reports, 15(1), 30978.
3. Chia-Yueh Chou , Chia-Hua Lin(林佳樺) , Ching-Han Liao , Yen-Ju Wu , Wei-Hao Chen , Bao-Jhen Li , Cheng-Yi Liu (2022.02). Mechanism and quantum efficiency of yellow emission at the organic-inorganic F8T2/p-GaN interface. Surfaces and Interfaces, 29, 101799.
4. Fan-Ching Chien, Ting Fu Zhang, Chi Chen, Thi Anh Nguyet Nguyen, Song-Yu Wang, Syuan Miao Lai, Chia-Hua Lin(林佳樺), Chun-Kai Huang, Cheng-Yi Liu, and Kun-Yu Lai (2021.04). Nanostructured InGaN Quantum Wells as a Surface-Enhanced Raman Scattering Substrate with Expanded Hot Spots. ACS Applied Nano Materials, 4(3), 2614-2620.
5. Chia-Yueh Chou, Chia-Hua Lin(林佳樺), Wei-Hao Chen, Bao-Jhen Li, Cheng-Yi Liu (2020.06). High-dielectric-constant silicon nitride thin films fabricated by radio frequency sputtering in Ar and Ar/N2 gas mixture. Thin Solid Films, 709, 138198.
6. Chia-Hua Lin(林佳樺); Ching-Han Liao; Wei-Hao Chen; Chia-Yuen Chou; Cheng-Yi Liu (2019.04). Fabrication of p-type TiO2 and transparent p-TiO2/n-ITO p-n junctions. AIP advances, 9(4), 045229.